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SCIESCOPUS
Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increaseGo to Link

Zheng, Dong-Guang; Shim, Jong-In; Shin, Dong-Soo

ArticleIssue Date2021CitationJapanese Journal of Applied Physics, v.60, no.3, pp 1 - 7PublisherIOP Publishing Ltd
SCIESCOPUS
Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting DiodesGo to Link

Shim, Jong-In; Shin, Dong Soo; Oh, Chan-Hyoung; Jung, Hyundon

ArticleIssue Date2019CitationECS Journal of Solid State Science and Technology, v.9, no.1, pp 1 - 10PublisherElectrochemical Society, Inc.
SCISCIESCOPUS
Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodesGo to Link

Oh, Chan-Hyoung; Shim, Jong-In; Shin, Dong-Soo

ArticleIssue Date2019CitationJapanese Journal of Applied Physics, v.58, no.SC, pp 1 - 8PublisherIOP Publishing Ltd
SCISCIESCOPUS
Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDsGo to Link

Oh, Chan-Hyoung; Shin, Dong-Soo; Shim, Jong-In

ArticleIssue Date2019CitationIEEE Photonics Technology Letters, v.31, no.17, pp 1441 - 1444PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Understanding Microscopic Properties of Light-Emitting Diodes from Macroscopic Characterization: Ideality Factor, S-parameter, and Internal Quantum EfficiencyGo to Link

Shin, Dong-Soo; Shim, Jong-In

ArticleIssue Date2022Citationphysica status solidi (a) - applications and materials science, v.219, no.9, pp 1 - 6PublisherWiley - V C H Verlag GmbbH & Co.
SCISCIESCOPUSKCI
An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active AreasGo to Link

Shim, Jong-In; Kim, Hyunsung; Shin, Dong-Soo; Yoo, Han-Youl

ArticleIssue Date2011CitationJournal of the Korean Physical Society, v.58, no.3, pp 503 - 508Publisher한국물리학회
SCIESCOPUS
Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well StructuresGo to Linkopen access

Park, Seoung-Hwan; Shim, Jong-In; Shin, Dong-Soo

ArticleIssue Date2022CitationAdvances in Condensed Matter Physics, v.2022, pp 1 - 6PublisherHindawi Publishing Corporation
SCOPUS
Investigation into charge carrier dynamics in organic light-emitting diodesGo to Linkopen access

Zheng, Dong-Guang; Lee, Hyeon-Dong; Lee, Gyeong Won; Shin, Dong-Soo; Kim, Jeongwon; Shim, Jong-In; Lin, Zhiqun; Lee, Tae-Woo; Kim, Dong Ha

ArticleIssue Date2024CitationNano Research Energy, v.3, no.2, pp 1 - 8PublisherTsinghua University Press
SCIESCOPUS
Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic TemperaturesGo to Link

Park, Changeun; Park, Jaehyeok; Min, Sangjin; Shim, Jong-In; Shin, Dong-Soo

ArticleIssue Date2024CitationACS Photonics, v.11, no.2, pp 464 - 469PublisherAmerican Chemical Society
SCIESCOPUS
Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stressGo to Linkopen access

Lee, Gyeong Won; Choi, Yoonsuk; Kim, Heejin; Park, Jongwoo; Shim, Jong-In; Shin, Dong-Soo

ArticleIssue Date2021CitationApplied Sciences-basel, v.11, no.16, pp 1 - 10PublisherMDPI
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