Integrated circuit (IC)-embedded wafer-level packaging technology for millimeter-wave power ICs
- Authors
- Yook, Jong-Min; Sim, Sanghoon; Park, Bok-Ju; Kim, Dongsu; Kim, Young-Joon
- Issue Date
- Sep-2019
- Publisher
- WILEY
- Keywords
- fan-out package; integrated passive device (IPD); millimeter-wave power amplifier; power amplifier; wafer-level packaging
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.61, no.9, pp.2210 - 2213
- Journal Title
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
- Volume
- 61
- Number
- 9
- Start Page
- 2210
- End Page
- 2213
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1041
- DOI
- 10.1002/mop.31885
- ISSN
- 0895-2477
- Abstract
- A wafer-level packaging (WLP) technology for millimeterwave power devices is presented, which features simple fabrication, low-signal transition loss, and thermal consideration. Instead of using a rigid interposer, the proposed WLP technology incorporates thick copper sheet and an adhesive tape as the initial carrier. Short electroplated interconnection showed transition loss within 0.2 dB and return loss above 20 dB, at frequency range up to 30 GHz. We demonstrate the WLP with an RF power amplifier at 28 GHz. The power-added efficiency (PAE) of the power amplifier packaged in the proposed technology is 30% at an output power of 27.5 dBm, which is identical to an unpackaged integrated circuit (IC) wire bonded on a printed circuit board. The size of the IC, and the final packaged sample was 2.2 x 1.5 x 0.1 mm(3) and 3.3 x 2.4 x 0.2 mm(3), respectively.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.