Giant Electroresistive Ferroelectric Diode on 2DEG
DC Field | Value | Language |
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dc.contributor.author | Kim, Shin-Ik | - |
dc.contributor.author | Gwon, Hyo Jin | - |
dc.contributor.author | Kim, Dai-Hong | - |
dc.contributor.author | Kim, Seong Keun | - |
dc.contributor.author | Choi, Ji-Won | - |
dc.contributor.author | Yoon, Seok-Jin | - |
dc.contributor.author | Chang, Hye Jung | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Kwon, Beomjin | - |
dc.contributor.author | Bark, Chung-Wung | - |
dc.contributor.author | Hong, Seong-Hyeon | - |
dc.contributor.author | Kim, Jin-Sang | - |
dc.contributor.author | Baek, Seung-Hyub | - |
dc.date.available | 2020-02-28T09:42:56Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-05-27 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10511 | - |
dc.description.abstract | Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O-3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at +/- 6 V) and I-on/I-off ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.subject | POLARIZATION | - |
dc.subject | CONDUCTION | - |
dc.title | Giant Electroresistive Ferroelectric Diode on 2DEG | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000355539600001 | - |
dc.identifier.doi | 10.1038/srep10548 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.5 | - |
dc.identifier.scopusid | 2-s2.0-84930225590 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Bark, Chung-Wung | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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