Low-Temperature, Solution-Processed ZrO2:B Thin Film: A Bifunctional Inorganic/Organic Interfacial Glue for Flexible Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Park, Jee Ho | - |
dc.contributor.author | Oh, Jin Young | - |
dc.contributor.author | Han, Sun Woong | - |
dc.contributor.author | Lee, Tae Il | - |
dc.contributor.author | Baik, Hong Koo | - |
dc.date.available | 2020-02-28T09:46:19Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-03-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10686 | - |
dc.description.abstract | A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (J(leak)) of 4.38 x 10(-8) A/cm(-2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (I-on/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | GATE INSULATOR | - |
dc.subject | SOL-GEL | - |
dc.subject | MECHANISM | - |
dc.subject | TRANSPARENT | - |
dc.subject | FABRICATION | - |
dc.subject | DIELECTRICS | - |
dc.subject | PLASMA | - |
dc.title | Low-Temperature, Solution-Processed ZrO2:B Thin Film: A Bifunctional Inorganic/Organic Interfacial Glue for Flexible Thin-Film Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000353005300007 | - |
dc.identifier.doi | 10.1021/acsami.5b00036 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.8, pp.4494 - 4503 | - |
dc.identifier.scopusid | 2-s2.0-84924250359 | - |
dc.citation.endPage | 4503 | - |
dc.citation.startPage | 4494 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 7 | - |
dc.citation.number | 8 | - |
dc.contributor.affiliatedAuthor | Lee, Tae Il | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | bifunctional inorganic/organic interfacial glue | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | solution processing | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | boron-doped peroxo-zirconium oxide | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | GATE INSULATOR | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | PLASMA | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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