Electrical Characteristics of Metal Catalyst-Assisted Etched Rough Silicon Nanowire Depending on the Diameter Size
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang Hoon | - |
dc.contributor.author | Lee, Tae Il | - |
dc.contributor.author | Lee, Su Jeong | - |
dc.contributor.author | Lee, Sang Myung | - |
dc.contributor.author | Yun, Ilgu | - |
dc.contributor.author | Myoung, Jae Min | - |
dc.date.available | 2020-02-28T10:44:05Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-01-14 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10869 | - |
dc.description.abstract | The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NWs diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V.s and the threshold voltage moved from -7.17 to 0 V because phononelectron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | GERMANIUM NANOWIRES | - |
dc.subject | CORE-SHELL | - |
dc.subject | GROWTH | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | NANOSENSORS | - |
dc.subject | BIOSENSORS | - |
dc.title | Electrical Characteristics of Metal Catalyst-Assisted Etched Rough Silicon Nanowire Depending on the Diameter Size | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000348085200111 | - |
dc.identifier.doi | 10.1021/am507478q | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.1, pp.929 - 934 | - |
dc.identifier.scopusid | 2-s2.0-84921272592 | - |
dc.citation.endPage | 934 | - |
dc.citation.startPage | 929 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 7 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Lee, Tae Il | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | diameter modulation | - |
dc.subject.keywordAuthor | dielectrophorestic alignment | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | silicon nanowires | - |
dc.subject.keywordAuthor | transfer method | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | GERMANIUM NANOWIRES | - |
dc.subject.keywordPlus | CORE-SHELL | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | NANOSENSORS | - |
dc.subject.keywordPlus | BIOSENSORS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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