Modulation of the Dirac Point Voltage of Graphene by Ion-Gel Dielectrics and Its Application to Soft Electronic Devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Un Jeong | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Shim, Youngseon | - |
dc.contributor.author | Park, Yeonsang | - |
dc.contributor.author | Lee, Chang-Won | - |
dc.contributor.author | Kim, Tae-Ho | - |
dc.contributor.author | Lee, Hyo Sug | - |
dc.contributor.author | Chung, Dae-Young | - |
dc.contributor.author | Kihm, Jineun | - |
dc.contributor.author | Roh, Young-Geun | - |
dc.contributor.author | Lee, Jaesoong | - |
dc.contributor.author | Son, Hyungbin | - |
dc.contributor.author | Kim, Sangsig | - |
dc.contributor.author | Hur, Jaehyun | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.date.available | 2020-02-28T10:44:37Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10897 | - |
dc.description.abstract | We investigated systematic modulation of the Dirac point voltage of graphene transistors by changing the type of ionic liquid used as a main gate dielectric component. Ion gels were formed from ionic liquids and a non-triblock-copolymer-based binder involving UV irradiation. With a fixed cation (anion), the Dirac point voltage shifted to a higher voltage as the size of anion (cation) increased. Mechanisms for modulation of the Dirac point voltage of graphene transistors by designing ionic liquids were fully understood using molecular dynamics simulations, which excellently matched our experimental results. It was found that the ion sizes and molecular structures play an essential role in the modulation of the Dirac point voltage of the graphene. Through control of the position of their Dirac point voltages on the basis of our findings, complementary metal-oxide-semiconductor (CMOS)-like graphene-based inverters using two different ionic liquids worked perfectly even at a very low source voltage (V-DD = 1 mV), which was not possible for previous works. These results can be broadly applied in the development of low-power-consumption, flexible/stretchable, CMOS-like graphene-based electronic devices in the future. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS NANO | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | FLEXIBLE SUPERCAPACITORS | - |
dc.subject | ENHANCED PERFORMANCE | - |
dc.subject | CARBON NANOTUBES | - |
dc.subject | LARGE-AREA | - |
dc.subject | TRANSPARENT | - |
dc.subject | OXIDE | - |
dc.subject | TRANSPORT | - |
dc.subject | SPEED | - |
dc.title | Modulation of the Dirac Point Voltage of Graphene by Ion-Gel Dielectrics and Its Application to Soft Electronic Devices | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000348619000064 | - |
dc.identifier.doi | 10.1021/nn505925u | - |
dc.identifier.bibliographicCitation | ACS NANO, v.9, no.1, pp.602 - 611 | - |
dc.identifier.scopusid | 2-s2.0-84921757321 | - |
dc.citation.endPage | 611 | - |
dc.citation.startPage | 602 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 9 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Hur, Jaehyun | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | ion-gel dielectric | - |
dc.subject.keywordAuthor | graphene transistor | - |
dc.subject.keywordAuthor | flexible devices | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | FLEXIBLE SUPERCAPACITORS | - |
dc.subject.keywordPlus | ENHANCED PERFORMANCE | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SPEED | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.