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RF 마그네트론 스퍼터링을 이용한 ITO 기판에불순물 증착에 관한 연구

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dc.contributor.author박정철-
dc.contributor.author추순남-
dc.date.available2020-02-28T11:43:27Z-
dc.date.created2020-02-12-
dc.date.issued2015-
dc.identifier.issn1229-800x-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/11219-
dc.description.abstractIn this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of 300℃ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of 250℃.-
dc.language한국어-
dc.language.isoko-
dc.publisher대한전기학회-
dc.relation.isPartOf전기학회 논문지 P권-
dc.titleRF 마그네트론 스퍼터링을 이용한 ITO 기판에불순물 증착에 관한 연구-
dc.title.alternativeStudy of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass2-
dc.identifier.bibliographicCitation전기학회 논문지 P권, v.64, no.4, pp.277 - 280-
dc.identifier.kciidART002052370-
dc.citation.endPage280-
dc.citation.startPage277-
dc.citation.title전기학회 논문지 P권-
dc.citation.volume64-
dc.citation.number4-
dc.contributor.affiliatedAuthor박정철-
dc.contributor.affiliatedAuthor추순남-
dc.subject.keywordAuthorITO substrate-
dc.subject.keywordAuthorRF power-
dc.subject.keywordAuthorTransmittance-
dc.subject.keywordAuthorTemperature-
dc.description.journalRegisteredClasskci-
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반도체대학 (반도체·전자공학부)
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