Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Jung, Young Hun | - |
dc.contributor.author | Hon, Seungpyo | - |
dc.contributor.author | Lee, Suhui | - |
dc.contributor.author | Jin, Seonghyun | - |
dc.contributor.author | Kim, Tae-Woong | - |
dc.contributor.author | Chang, Yeoungjin | - |
dc.contributor.author | Jang, Jin | - |
dc.date.available | 2020-02-27T02:41:32Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-07-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1244 | - |
dc.description.abstract | We report the thickness effect of amorphous silicon for the polycrystalline silicon (poly-Si) layer laterally crystallized by blue laser annealing (BLA) using 50 mu s melting time. The grain size is much larger and full width at half-maximum of Raman intensity is lower compared to those of the poly-Si by excimer laser annealing. It is found that the average width of lateral grain is wider than 3 mu m and full width of half maximum of Raman intensity for the BLA poly-Si with an optimum thickness of 90 nm is 3.32 cm(-1). The p-type poly-Si thin-film transistor with 90 nm exhibits field-effect mobility of 161.91 +/- 6.14 cm(2)/Vs and subthreshold swing of 227 +/- 7 mV/dec. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.subject | METAL-INDUCED CRYSTALLIZATION | - |
dc.subject | POLY-SI | - |
dc.subject | POLYCRYSTALLINE-SILICON | - |
dc.title | Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000468174200012 | - |
dc.identifier.doi | 10.1016/j.tsf.2019.04.023 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.681, pp.93 - 97 | - |
dc.identifier.scopusid | 2-s2.0-85064711002 | - |
dc.citation.endPage | 97 | - |
dc.citation.startPage | 93 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 681 | - |
dc.contributor.affiliatedAuthor | Chang, Yeoungjin | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Low-temperature polycrystalline silicon | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
dc.subject.keywordAuthor | Blue laser annealing | - |
dc.subject.keywordAuthor | Sequential lateral crystallization | - |
dc.subject.keywordAuthor | Grain size | - |
dc.subject.keywordAuthor | High mobility | - |
dc.subject.keywordPlus | METAL-INDUCED CRYSTALLIZATION | - |
dc.subject.keywordPlus | POLY-SI | - |
dc.subject.keywordPlus | POLYCRYSTALLINE-SILICON | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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