Nanotrapping memories
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.available | 2020-02-27T02:41:34Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-07-01 | - |
dc.identifier.issn | 2055-6756 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1249 | - |
dc.description.abstract | Electrical memories have been vital to our everyday life, and their impact will be more significant in a future that is data-centric, sensor-equipped, and artificial-intelligence-powered. This review aims at discussing advances in nanotrapping memories, a term that is coined to embrace devices that functionally rely upon embedded nanoscale charge-trapping objects. The rationalization, demonstrations, and engineering concepts suggest that nanotrapping memories position themselves as a promising platform for both traditional and bio-inspired hardware architectures, and that their strong materials emphasis fuels the upcoming interdisciplinary nanoscience research. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | NANOSCALE HORIZONS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FLOATING-GATE | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | GOLD NANOPARTICLES | - |
dc.subject | THRESHOLD VOLTAGE | - |
dc.subject | SMART BUILDINGS | - |
dc.subject | DEVICES | - |
dc.subject | INTERNET | - |
dc.subject | RETENTION | - |
dc.title | Nanotrapping memories | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000474586600004 | - |
dc.identifier.doi | 10.1039/c9nh00076c | - |
dc.identifier.bibliographicCitation | NANOSCALE HORIZONS, v.4, no.4, pp.828 - 839 | - |
dc.identifier.scopusid | 2-s2.0-85067927614 | - |
dc.citation.endPage | 839 | - |
dc.citation.startPage | 828 | - |
dc.citation.title | NANOSCALE HORIZONS | - |
dc.citation.volume | 4 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Review | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | GOLD NANOPARTICLES | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | SMART BUILDINGS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | INTERNET | - |
dc.subject.keywordPlus | RETENTION | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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