Improvement of contact resistance in transparent thin film transistor by applying an Al/SWCNTs bilayer as electrodes

Abstract

Contact resistance has an important effect on the electrical characteristics of the thin film transistor (TFT). In the solution process, we present a study on the improvement of contact resistance between the single-walled carbon nanotubes (SWCNTs) and indium oxide (In2O 3). In order to reduce the high carrier injection barrier for SWCNTs, aluminum (Al) was deposited as a contact layer between the SWCNTs and In 2O3 films. Integrated device consisting of Al/SWCNT bilayers, In2O3 and hafnium oxide (HfO2) as source and drain electrodes, channel layers and gate insulator, respectively, were fabricated on indium tin oxide (ITO) glass, bottom gate, structure. The threshold voltage of 0.53 V, sub-threshold swing of 0.39 Vdec-1, field-effect mobility of 3.18 cm2 V-1s-1 and Ion / Ioff ratio of ∼106 were obtained. Furthermore, a transmittance of 69.82% was obtained.