Highly conductive and stretchable poly(dimethylsiloxane):poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) blends for organic interconnects
DC Field | Value | Language |
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dc.contributor.author | Noh, Jin-Seo | - |
dc.date.available | 2020-02-28T21:45:20Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13990 | - |
dc.description.abstract | Naturally immiscible PEDOT:PSS and PDMS, which are a typical conducting polymer and an transparent elastomer, respectively, were blended by the support of PDMS-b-PEO. A block copolymer, PDMS-b-PEO, consisting of hydrophobic PDMS backbones and hydrophilic PEO side chains, significantly improved the miscibility of PEDOT: PSS and PDMS. At an optimal PDMS-b-PEO concentration of 30%, a cured PEDOT: PSS: PDMS film was found to be comprised of three-dimensional PDMS networks and a PEDOT: PSS phase filling in between the networks. The optimal blend film exhibited a conductivity comparable to a pure PEDOT: PSS film and a maximum strain to rupture of about 75%. It was also demonstrated that interconnects made of this blend film functioned well irrespective of the substrate and the pattern size, and could reproducibly operate under strains up to 50%. These results indicate that the PEDOT: PSS: PDMS blends could be a practical choice for organic interconnects for future stretchable electronics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.subject | LARGE-AREA | - |
dc.subject | ELECTRONICS | - |
dc.subject | PRESSURE | - |
dc.subject | SENSORS | - |
dc.subject | MATRIX | - |
dc.subject | TRANSISTORS | - |
dc.subject | DEVICES | - |
dc.subject | SILICON | - |
dc.subject | FILMS | - |
dc.title | Highly conductive and stretchable poly(dimethylsiloxane):poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) blends for organic interconnects | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000329033700040 | - |
dc.identifier.doi | 10.1039/c3ra46087h | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.4, no.4, pp.1857 - 1863 | - |
dc.identifier.scopusid | 2-s2.0-84890077651 | - |
dc.citation.endPage | 1863 | - |
dc.citation.startPage | 1857 | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 4 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Noh, Jin-Seo | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | PRESSURE | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | MATRIX | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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