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Cited 56 time in webofscience Cited 59 time in scopus
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Highly conductive and stretchable poly(dimethylsiloxane):poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) blends for organic interconnects

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dc.contributor.authorNoh, Jin-Seo-
dc.date.available2020-02-28T21:45:20Z-
dc.date.created2020-02-06-
dc.date.issued2014-
dc.identifier.issn2046-2069-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13990-
dc.description.abstractNaturally immiscible PEDOT:PSS and PDMS, which are a typical conducting polymer and an transparent elastomer, respectively, were blended by the support of PDMS-b-PEO. A block copolymer, PDMS-b-PEO, consisting of hydrophobic PDMS backbones and hydrophilic PEO side chains, significantly improved the miscibility of PEDOT: PSS and PDMS. At an optimal PDMS-b-PEO concentration of 30%, a cured PEDOT: PSS: PDMS film was found to be comprised of three-dimensional PDMS networks and a PEDOT: PSS phase filling in between the networks. The optimal blend film exhibited a conductivity comparable to a pure PEDOT: PSS film and a maximum strain to rupture of about 75%. It was also demonstrated that interconnects made of this blend film functioned well irrespective of the substrate and the pattern size, and could reproducibly operate under strains up to 50%. These results indicate that the PEDOT: PSS: PDMS blends could be a practical choice for organic interconnects for future stretchable electronics.-
dc.language영어-
dc.language.isoen-
dc.publisherROYAL SOC CHEMISTRY-
dc.relation.isPartOfRSC ADVANCES-
dc.subjectLARGE-AREA-
dc.subjectELECTRONICS-
dc.subjectPRESSURE-
dc.subjectSENSORS-
dc.subjectMATRIX-
dc.subjectTRANSISTORS-
dc.subjectDEVICES-
dc.subjectSILICON-
dc.subjectFILMS-
dc.titleHighly conductive and stretchable poly(dimethylsiloxane):poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) blends for organic interconnects-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000329033700040-
dc.identifier.doi10.1039/c3ra46087h-
dc.identifier.bibliographicCitationRSC ADVANCES, v.4, no.4, pp.1857 - 1863-
dc.identifier.scopusid2-s2.0-84890077651-
dc.citation.endPage1863-
dc.citation.startPage1857-
dc.citation.titleRSC ADVANCES-
dc.citation.volume4-
dc.citation.number4-
dc.contributor.affiliatedAuthorNoh, Jin-Seo-
dc.type.docTypeArticle-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusPRESSURE-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusMATRIX-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusFILMS-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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