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The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor

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dc.contributor.authorMoon, Kyeong-Ju-
dc.contributor.authorLee, Tae Il-
dc.contributor.authorLee, Sang-Hoon-
dc.contributor.authorMyoung, Jae-Min-
dc.date.available2020-02-28T21:45:30Z-
dc.date.created2020-02-06-
dc.date.issued2014-
dc.identifier.issn1359-7345-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13999-
dc.description.abstractA partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device. Addition of Na+ ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.-
dc.language영어-
dc.language.isoen-
dc.publisherROYAL SOC CHEMISTRY-
dc.relation.isPartOfCHEMICAL COMMUNICATIONS-
dc.subjectHYSTERESIS-
dc.subjectNANOTUBES-
dc.subjectDIODE-
dc.subjectROUTE-
dc.titleThe sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000333166700024-
dc.identifier.doi10.1039/c4cc00749b-
dc.identifier.bibliographicCitationCHEMICAL COMMUNICATIONS, v.50, no.31, pp.4112 - 4114-
dc.identifier.scopusid2-s2.0-84897876472-
dc.citation.endPage4114-
dc.citation.startPage4112-
dc.citation.titleCHEMICAL COMMUNICATIONS-
dc.citation.volume50-
dc.citation.number31-
dc.contributor.affiliatedAuthorLee, Tae Il-
dc.type.docTypeArticle-
dc.subject.keywordPlusHYSTERESIS-
dc.subject.keywordPlusNANOTUBES-
dc.subject.keywordPlusDIODE-
dc.subject.keywordPlusROUTE-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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