Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures
DC Field | Value | Language |
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dc.contributor.author | Kim, Min Hong | - |
dc.contributor.author | Choi, Hyung Wook | - |
dc.contributor.author | Kim, Kyung Hwan | - |
dc.date.available | 2020-02-28T22:44:17Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14181 | - |
dc.description.abstract | The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O-2/(Ar + O-2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 degrees C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 degrees C indicated amorphous properties, while those annealed above 400 degrees C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm(2)/C for thin film annealed at 200 degrees C. The WO3-x thin film annealed at 200 degrees C showed superior electrochromic properties. (C) 2013 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | TUNGSTEN-OXIDE FILMS | - |
dc.subject | DEVICES | - |
dc.subject | OXYGEN | - |
dc.title | Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000328492300017 | - |
dc.identifier.doi | 10.7567/JJAP.52.11NB09 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.11 | - |
dc.identifier.scopusid | 2-s2.0-84889043986 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.citation.number | 11 | - |
dc.contributor.affiliatedAuthor | Kim, Min Hong | - |
dc.contributor.affiliatedAuthor | Choi, Hyung Wook | - |
dc.contributor.affiliatedAuthor | Kim, Kyung Hwan | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TUNGSTEN-OXIDE FILMS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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