Influence of RF Magnetron Sputtering Condition on the ZnO Passivating Layer for Dye-sensitized Solar Cells
DC Field | Value | Language |
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dc.contributor.author | Rhee, S.W. | - |
dc.contributor.author | Choi, H.W. | - |
dc.date.available | 2020-02-29T00:47:38Z | - |
dc.date.created | 2020-02-12 | - |
dc.date.issued | 2013-04 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14907 | - |
dc.description.abstract | Dye-sensitized solar cells have a FTO/TiO2/Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the TiO2/FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different O2:Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar:O2 ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes. © 2013 KIEEME. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.relation.isPartOf | Transactions on Electrical and Electronic Materials | - |
dc.title | Influence of RF Magnetron Sputtering Condition on the ZnO Passivating Layer for Dye-sensitized Solar Cells | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.doi | 10.4313/TEEM.2013.14.2.86 | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.14, no.2, pp.86 - 89 | - |
dc.identifier.kciid | ART001761062 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-84876550475 | - |
dc.citation.endPage | 89 | - |
dc.citation.startPage | 86 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 14 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Rhee, S.W. | - |
dc.contributor.affiliatedAuthor | Choi, H.W. | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Dye-sensitized solar cells | - |
dc.subject.keywordAuthor | Electron recombination | - |
dc.subject.keywordAuthor | RF-magnetron sputter | - |
dc.subject.keywordAuthor | ZnO passivating layer | - |
dc.subject.keywordPlus | Counter electrodes | - |
dc.subject.keywordPlus | Dye-Sensitized solar cell | - |
dc.subject.keywordPlus | Electron recombinations | - |
dc.subject.keywordPlus | Glass interface | - |
dc.subject.keywordPlus | Passivating layer | - |
dc.subject.keywordPlus | RF-magnetron sputter | - |
dc.subject.keywordPlus | rf-Magnetron sputtering | - |
dc.subject.keywordPlus | ZnO thin film | - |
dc.subject.keywordPlus | Electron mobility | - |
dc.subject.keywordPlus | Electrons | - |
dc.subject.keywordPlus | Glass | - |
dc.subject.keywordPlus | Magnetron sputtering | - |
dc.subject.keywordPlus | Metallic films | - |
dc.subject.keywordPlus | Optical films | - |
dc.subject.keywordPlus | Passivation | - |
dc.subject.keywordPlus | Photoelectrochemical cells | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Solar cells | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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