Toward a Fully Analytical Contact Resistance Expression in Organic Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Chang-Hyun | - |
dc.contributor.author | Horowitz, Gilles | - |
dc.date.available | 2020-02-27T03:42:02Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-04-10 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1588 | - |
dc.description.abstract | Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization. This theory is applied to a set of experimentally fabricated devices to exemplify how to utilize the model in practice. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | MATERIALS | - |
dc.subject | FIELD-EFFECT TRANSISTOR | - |
dc.subject | MOBILITY | - |
dc.subject | DEVICE | - |
dc.title | Toward a Fully Analytical Contact Resistance Expression in Organic Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000465500700168 | - |
dc.identifier.doi | 10.3390/ma12071169 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.12, no.7 | - |
dc.identifier.scopusid | 2-s2.0-85065673697 | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 7 | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | organic field-effect transistors | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | device physics | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | DEVICE | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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