Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Woo, Chang Ho | - |
dc.contributor.author | Ahn, Cheol Hyoun | - |
dc.contributor.author | Kwon, Yong Hun | - |
dc.contributor.author | Han, Jae-Hee | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.date.available | 2020-02-29T04:44:38Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/15961 | - |
dc.description.abstract | Al2O3 dielectric layers with a dense and atomically flat surface were grown at relatively low temperatures of 150 degrees C by atomic layer deposition (ALD) for use as the gate oxide of transparent and flexible oxide thin-film-transistors (TFTs). The ALD growth of the high quality Al2O3 with a less rough surface at 120 degrees C allowed us to use the liftoff process without wet chemical etching and made the fabrication method for flexible electronics simple. This also improved the electrical performance of the oxide TFTs, such as high field effect mobility, low subthreshold gate swing, and low hysteresis behavior, due to the low charge trap sites at the gate oxide and channel interface. Finally, we fabricated InGaZnO TFTs with good device performance on a flexible substrate with poly-4-vinylphenol coating at a maximum processing temperature of 120 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.relation.isPartOf | METALS AND MATERIALS INTERNATIONAL | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | HIGH-K | - |
dc.subject | PERFORMANCE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | DIELECTRICS | - |
dc.subject | STABILITY | - |
dc.subject | ROUGHNESS | - |
dc.subject | OPERATION | - |
dc.title | Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000311516500020 | - |
dc.identifier.doi | 10.1007/s12540-012-6020-5 | - |
dc.identifier.bibliographicCitation | METALS AND MATERIALS INTERNATIONAL, v.18, no.6, pp.1055 - 1060 | - |
dc.identifier.kciid | ART001712416 | - |
dc.identifier.scopusid | 2-s2.0-84879644742 | - |
dc.citation.endPage | 1060 | - |
dc.citation.startPage | 1055 | - |
dc.citation.title | METALS AND MATERIALS INTERNATIONAL | - |
dc.citation.volume | 18 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Han, Jae-Hee | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | amorphous materials | - |
dc.subject.keywordAuthor | dielectrics | - |
dc.subject.keywordAuthor | oxides | - |
dc.subject.keywordAuthor | semconductors | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-K | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | ROUGHNESS | - |
dc.subject.keywordPlus | OPERATION | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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