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Cited 72 time in webofscience Cited 74 time in scopus
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A Facile Route To Recover Intrinsic Graphene over Large Scale

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dc.contributor.authorShin, Dong-Wook-
dc.contributor.authorLee, Hyun Myoung-
dc.contributor.authorYu, Seong Man-
dc.contributor.authorLim, Kwang-Soo-
dc.contributor.authorJung, Jae Hoon-
dc.contributor.authorKim, Min-Kyu-
dc.contributor.authorKim, Sang-Woo-
dc.contributor.authorHan, Jae-Hee-
dc.contributor.authorRuoff, Rodney S.-
dc.contributor.authorYoo, Ji-Beom-
dc.date.available2020-02-29T05:43:45Z-
dc.date.created2020-02-06-
dc.date.issued2012-09-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16192-
dc.description.abstractThe intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H2O/O-2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H2O/O-2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H2O/O-2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfACS NANO-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectSUSPENDED GRAPHENE-
dc.subjectSTAINLESS-STEELS-
dc.subjectSILICON-NITRIDE-
dc.subjectREDOX COUPLE-
dc.subjectHIGH-QUALITY-
dc.subjectMOLECULES-
dc.subjectFILMS-
dc.subjectWATER-
dc.subjectCONDUCTION-
dc.titleA Facile Route To Recover Intrinsic Graphene over Large Scale-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000309040600024-
dc.identifier.doi10.1021/nn3017603-
dc.identifier.bibliographicCitationACS NANO, v.6, no.9, pp.7781 - 7788-
dc.identifier.scopusid2-s2.0-84866687337-
dc.citation.endPage7788-
dc.citation.startPage7781-
dc.citation.titleACS NANO-
dc.citation.volume6-
dc.citation.number9-
dc.contributor.affiliatedAuthorHan, Jae-Hee-
dc.type.docTypeArticle-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthortransistor-
dc.subject.keywordAuthorintrinsic properties-
dc.subject.keywordAuthorbuffed oxide etch (BOE)-
dc.subject.keywordAuthorPMMA-
dc.subject.keywordAuthorH2O/O-2 redox system-
dc.subject.keywordAuthorFermi level-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusSUSPENDED GRAPHENE-
dc.subject.keywordPlusSTAINLESS-STEELS-
dc.subject.keywordPlusSILICON-NITRIDE-
dc.subject.keywordPlusREDOX COUPLE-
dc.subject.keywordPlusHIGH-QUALITY-
dc.subject.keywordPlusMOLECULES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusWATER-
dc.subject.keywordPlusCONDUCTION-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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