Improved Device Ideality in Aged Organic Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.available | 2020-02-27T04:40:49Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1758 | - |
dc.description.abstract | The origin of ideality improvement in aged dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) transistors is explored. High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emerging parameterization scheme that elucidates the linearity of the transfer curves. Unintentional carrier doping in exceptionally stable DNTT molecules is suggested as the major driver of the recovery of an ideal state of the functional devices, thoroughly investigated by analytical decoupling of the channel and contact potentials as well as numerical finite-element simulation on parametric interplays. [GRAPHICS] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | INJECTION | - |
dc.title | Improved Device Ideality in Aged Organic Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000458238500004 | - |
dc.identifier.doi | 10.1007/s13391-018-00112-9 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.15, no.2, pp.166 - 170 | - |
dc.identifier.kciid | ART002443261 | - |
dc.identifier.scopusid | 2-s2.0-85061274343 | - |
dc.citation.endPage | 170 | - |
dc.citation.startPage | 166 | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Organic semiconductors | - |
dc.subject.keywordAuthor | Field-effect transistors | - |
dc.subject.keywordAuthor | DNTT | - |
dc.subject.keywordAuthor | Device ideality | - |
dc.subject.keywordAuthor | Aging | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | INJECTION | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.