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A study of perovskite solar cell with a Fe3+/Ga3+ doped TiO2 layer

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dc.contributor.authorShin, Seong Gwan-
dc.contributor.authorKim, Ii Tae-
dc.contributor.authorChoi, Hyung Wook-
dc.date.available2020-04-16T06:35:19Z-
dc.date.created2020-04-14-
dc.date.issued2020-04-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/27300-
dc.description.abstractPerovskite has a structure of a large number of solar cells, which is very promising for the rapid commercialization of large-scale, low-cost solar cells. Perovskite solar cells (PSCs) have many advantages, such as their simple processing techniques and inexpensive raw materials. The conduction band of TiO2 used in many PSCs coincides well with that of the perovskite active layer. In addition, TiO2 has excellent stability and conductivity and can be obtained by various low-cost deposition methods. However, TiO2 traps electrons in oxygen vacancies and Ti lattice sites; Fe3+ this leads to recombination, which in turn reduces the efficiency of the device. In this study, we investigated the effects of Fe3+ and Ga3+ ions on the efficiency of PSCs by doping them in a compact and mesoporous layer of TiO2. As a result, the perovskite solar cell using TiO2 doped with Fe3+ and Ga3+ shows an open-circuit voltage of 0.974 V, current density of 21.909 mA cm(-2), 66.646% fill factor, and 14.21% efficiency. Fe3+ and Ga3+ have a smaller atomic radius than Ti4+ and thus, can replace Ti cations. Furthermore, the Fe3+ and Ga3+ doping of TiO2 is considered to be superior for the photoelectric performance of PSCs. (C) 2020 The Japan Society of Applied Physics-
dc.language영어-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.titleA study of perovskite solar cell with a Fe3+/Ga3+ doped TiO2 layer-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000519630000068-
dc.identifier.doi10.35848/1347-4065/ab7278-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.59-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85083300351-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume59-
dc.contributor.affiliatedAuthorShin, Seong Gwan-
dc.contributor.affiliatedAuthorKim, Ii Tae-
dc.contributor.affiliatedAuthorChoi, Hyung Wook-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusTITANIUM-DIOXIDE-
dc.subject.keywordPlusBLOCKING LAYERS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusDIFFUSION-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusLENGTHS-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
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IT융합대학 > 전기공학과 > 1. Journal Articles
공과대학 > 화공생명공학과 > 1. Journal Articles

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