Structural, Optical and Electrical Properties of NiO Thin Films Deposited on SiC Substrate by Using a Solution Process
DC Field | Value | Language |
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dc.contributor.author | Cho, Seulki | - |
dc.contributor.author | Seo, Ji-Ho | - |
dc.contributor.author | Lee, Young-Jae | - |
dc.contributor.author | Moon, Byungmoo | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Moon, Kyong-Sook | - |
dc.contributor.author | Koo, Sang-Mo | - |
dc.date.available | 2020-02-27T08:41:29Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 1941-4900 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3026 | - |
dc.description.abstract | In this study, we report on the fabrication of p-NiO/n-4H-SiC heterostructure diodes by using a solution process. The NiO layer was formed from mixing nickel acetate tetrahydrate as a nickel precursor, 2-methoxyethanol as a solvent and monoethanolamine as a stabilizer and spin coating onto a SiC substrate. We compared the properties of NiO layers resulting from different molar ratios, ranging from 0.5 to 1.5 M. I-V characteristics of NiO/4H-SiC heterojunction diodes exhibited a nonlinear curve typical of p-n junctions with a turn-on voltage and a rectification ratio of 2.0 V and similar to 10(7), respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.subject | GRAIN-SIZE | - |
dc.subject | TEMPERATURE | - |
dc.subject | THICKNESS | - |
dc.subject | GAS | - |
dc.title | Structural, Optical and Electrical Properties of NiO Thin Films Deposited on SiC Substrate by Using a Solution Process | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000454151000011 | - |
dc.identifier.doi | 10.1166/nnl.2018.2832 | - |
dc.identifier.bibliographicCitation | NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.10, no.12, pp.1700 - 1706 | - |
dc.citation.endPage | 1706 | - |
dc.citation.startPage | 1700 | - |
dc.citation.title | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 12 | - |
dc.contributor.affiliatedAuthor | Moon, Kyong-Sook | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Nickel Oxide | - |
dc.subject.keywordAuthor | Silicon Carbide | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | Sol-Gel Process | - |
dc.subject.keywordPlus | GRAIN-SIZE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | GAS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
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