Self-Rectifying DNTT Memristors

Abstract

In this letter, a new method for obtaining dynamic hysteresis in flexible thienoacene-based diodes is reported. A major strategy lies in the incorporation of a polymeric interlayer for dual purposes: the polarity inversion and memory effect. It is discovered that the proposed interface engineering transforms a regular organic diode into an efficient self-rectifying memristor, a highly desirable element for emerging neuromorphic applications. An electrical reconfiguration mechanism based on the field behavior at the blocking junction is conceptualized as a guideline for research on related materials and devices.