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분자선 에피탁시 장치로 성장한 GaN 에피층의 열처리효과
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최성재 | - |
| dc.date.available | 2020-04-24T16:42:38Z | - |
| dc.date.issued | 2009-05-29 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/33987 | - |
| dc.title | 분자선 에피탁시 장치로 성장한 GaN 에피층의 열처리효과 | - |
| dc.title.alternative | Effect of thermal annealing of GaN grown by Molecular Beam Epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국인터넷방송통신TV학회 춘계학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 한국과학기술회관 | - |
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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Related Researcher
- Choi, Sung Jai
- College of IT Convergence (Major of Electronic Engineering)