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Origin of electrically active and inactive defects associated with F impurity in SiO2Origin of electrically active and inactive defects associated with F impurity in SiO2
- Alternative Title
- Origin of electrically active and inactive defects associated with F impurity in SiO2
- Authors
- 이은철
- Issue Date
- 24-Oct-2008
- Place
- 대한민국
김대중컨벤션센터 (광주)
- metadata.conference.dc.citation.conferenceName
- 2008년 추계 한국물리학회
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Collections - 바이오나노대학 > 나노물리학과 > 2. Conference Papers
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Related Researcher
- Lee, Eun Cheol
- BioNano Technology (Department of Physics)