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Mechanism for nitrogen-enhanced negative bias temperature instability (NBTI) in state-of-the-art MOSFETs with ultrathin Si oxynitride gate dielectrics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이은철 | - |
| dc.date.available | 2020-04-24T20:38:53Z | - |
| dc.date.issued | 2007-11-05 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/35838 | - |
| dc.title | Mechanism for nitrogen-enhanced negative bias temperature instability (NBTI) in state-of-the-art MOSFETs with ultrathin Si oxynitride gate dielectrics | - |
| dc.title.alternative | Mechanism for nitrogen-enhanced negative bias temperature instability (NBTI) in state-of-the-art MOSFETs with ultrathin Si oxynitride gate dielectrics | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국바이오칩학회 2007 추계학술대회 | - |
| dc.citation.conferencePlace | South Korea | - |
| dc.citation.conferencePlace | 경원대학교 | - |
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Collections - 바이오나노대학 > 나노물리학과 > 2. Conference Papers
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Related Researcher
- Lee, Eun Cheol
- BioNano Technology (Department of Physics)