SiON MOSFET의 전기적 계면 트랩에 대한 양자화학적 연구
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이은철 | - |
dc.date.available | 2020-04-24T21:36:41Z | - |
dc.date.issued | 2007-10-04 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/36010 | - |
dc.title | SiON MOSFET의 전기적 계면 트랩에 대한 양자화학적 연구 | - |
dc.title.alternative | Quantum chemical study of electrically active interface traps in SiON MOSFETs | - |
dc.type | Conference | - |
dc.citation.conferenceName | 한국전기화학회 추계학술대회 | - |
dc.citation.conferencePlace | South Korea | - |
dc.citation.conferencePlace | 연세대학교 | - |
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