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In-Situ Boron Doping of Si(100): Effects of Low Boron Concentration on Hydride Surface Reactions
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조삼근 | - |
| dc.date.available | 2020-04-25T08:37:26Z | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/39448 | - |
| dc.title | In-Situ Boron Doping of Si(100): Effects of Low Boron Concentration on Hydride Surface Reactions | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 45th Annual International Symposium of the American Vaccuum Society | - |
| dc.citation.conferencePlace | United States | - |
| dc.citation.endPage | 1 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.title | AVS Program Abstracts | - |
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Collections - 바이오나노대학 > 나노화학과 > 2. Conference Papers
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Related Researcher
- Jo, Sam Keun
- BioNano Technology (Department of Chemistry)