Si(001)2x1 및 Si(001)2x1표면에서의 H, SiHx의 표면결합구조 및 화학적 반응성 연구:광화학적 Si-H 결합의 활성화를 통한 4족 반도체 저온원자층 에피텍시(LT-ALE)기법의 개발
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조삼근 | - |
dc.date.available | 2020-04-25T10:38:08Z | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/40103 | - |
dc.title | Si(001)2x1 및 Si(001)2x1표면에서의 H, SiHx의 표면결합구조 및 화학적 반응성 연구:광화학적 Si-H 결합의 활성화를 통한 4족 반도체 저온원자층 에피텍시(LT-ALE)기법의 개발 | - |
dc.type | Conference | - |
dc.citation.conferencePlace | 대한민국 | - |
dc.citation.title | 한국과학재단 | - |
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