Nanodielectrics approaches to low-voltage organic transistors and circuits
DC Field | Value | Language |
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dc.contributor.author | Lee, Seunghyuk | - |
dc.contributor.author | Han, Heesung | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.available | 2020-09-16T01:35:34Z | - |
dc.date.created | 2020-09-16 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 1286-0042 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78221 | - |
dc.description.abstract | In this review, advances in nanoscale dielectric materials for organic field-effect transistors (OFETs) are summarized. OFETs are highly promising device units for ultra-thin, light-weight, flexible, and wearable electronics systems, while the operating voltages of the reported devices are in many cases much higher than what is relevant to modern technological applications. Key aspects behind this issue are clarified in terms of basic transistor device physics, which translate into the important motivations for realizing nanodielectric-based low-voltage OFETs. Different possibilities of a device design are explained in detail by introducing important recent publications on each material class. Finally, several forward-looking remarks on the integration of nanodielectrics into next-generation OFETs are provided. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | EDP SCIENCES S A | - |
dc.relation.isPartOf | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | - |
dc.title | Nanodielectrics approaches to low-voltage organic transistors and circuits | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000565242600001 | - |
dc.identifier.doi | 10.1051/epjap/2020200120 | - |
dc.identifier.bibliographicCitation | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, v.91, no.2 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85091111469 | - |
dc.citation.title | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | - |
dc.citation.volume | 91 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Lee, Seunghyuk | - |
dc.contributor.affiliatedAuthor | Han, Heesung | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Review | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | MULTILAYERS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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