Integrating n-type semiconductor for passivating the defects of electron transport layer in two-dimensional perovskite solar cells

Abstract

In this work, we report a facile method to passivate the defects of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) by forming the integrated ETLs of PCBM/C60, which exhibits the improved electron extraction performance compared with the single PCBM layer. It is found that depositing the C60 layer on top of PCBM benefits the film morphology of ETL and leads to more appropriate energy alignment. As a result, the optimized group using PCBM/C60 as the integrated ETLs exhibit decreased photocurrent hysteresis and increased power conversion efficiency of 12.5%, which is about 35% higher than that of control group. © 2021 Elsevier B.V.