Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr:SnO2/p-Si Schottky barrier diode application
DC Field | Value | Language |
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dc.contributor.author | Ravikumar, K. | - |
dc.contributor.author | Agilan, S. | - |
dc.contributor.author | Raja, M. | - |
dc.contributor.author | Marnadu, R. | - |
dc.contributor.author | Alshahrani, T. | - |
dc.contributor.author | Shkir, Mohd | - |
dc.contributor.author | Balaji, M. | - |
dc.contributor.author | Ganesh, R. | - |
dc.date.accessioned | 2021-06-09T06:40:24Z | - |
dc.date.available | 2021-06-09T06:40:24Z | - |
dc.date.created | 2021-06-09 | - |
dc.date.issued | 2020-12 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81225 | - |
dc.description.abstract | Herein, the fabrication of novel pure and Zr-doped SnO2 (Zr@SnO2) films via sol-gel spin coating process for Schottky barrier diode (SBD) application has been reported. Phase and size analysis were carried out through X-ray diffraction and Scherrer rule was used to determine crystallite size, which is noticed between 2 and 6 nm. The SEM study reveals that the fabricated films contain very fine sphere-like grains. The optical transmittance of Zr@SnO2 thin films reveals that the grown films possess high transmittance which is good for optoelectronics. The values of energy gap for all Zr@SnO2 films were estimated between 3.90 and 3.96 eV. The dc conductivity analysis showed that SnO2 films possess higher electrical conductivity at 8 wt% of Zr. The barrier heights (phi(B)) and ideality factor (n) of the fabricated SBDs were calculated from both J-V and Cheung's method. Better performance was noticed for Zr (8 wt%):SnO2/p-Si SBD. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | PHYSICA B-CONDENSED MATTER | - |
dc.title | Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr:SnO2/p-Si Schottky barrier diode application | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000583242900003 | - |
dc.identifier.doi | 10.1016/j.physb.2020.412452 | - |
dc.identifier.bibliographicCitation | PHYSICA B-CONDENSED MATTER, v.599 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85090306529 | - |
dc.citation.title | PHYSICA B-CONDENSED MATTER | - |
dc.citation.volume | 599 | - |
dc.contributor.affiliatedAuthor | Balaji, M. | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Zr-doped SnO2 | - |
dc.subject.keywordAuthor | Optical properties | - |
dc.subject.keywordAuthor | Schottky barrier diode | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | Barrier height | - |
dc.subject.keywordPlus | DC ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | FREQUENCY | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | SB | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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