A facile sol-gel spin-coating fabrication of Ni@WO3 thin films and highly rectifying p-Si/n-Ni@WO3 heterojunction for optoelectronic applications
- Authors
- Raja, M.; Chandrasekaran, J.; Nguyen, Tien Dai; Marnadu, R.; Shkir, Mohd.; Kannan, S. Karthik; Balaji, M.; Ganesh, R.
- Issue Date
- Jan-2021
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.32, no.2, pp.1582 - 1592
- Journal Title
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Volume
- 32
- Number
- 2
- Start Page
- 1582
- End Page
- 1592
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81450
- DOI
- 10.1007/s10854-020-04927-x
- ISSN
- 0957-4522
- Abstract
- The WO3 thin films and p-Si/n-Ni@WO3 junction diodes are prepared with different wt% of Ni. The XRD profiles confirm that the monoclinic crystal system with a preferential orientation of (0 2 0) plane, in which their crystallite size is reduced from 28 to 14 nm with the rise of Ni content in WO3. From SEM images, the randomly arranged plate-like grain structure was observed for grown films and grain size reduces with an increase in Ni dopant concentration. The expected elements of Ni, W, and O are confirmed by the EDX spectrum and their ratio of composition was obtained. The UV-Vis-NIR spectra reveal that the 4 wt% of Ni@WO3 film exhibits a higher transmittance (similar to 80%) with a low bandgap (E-g = 2.84 eV) value. The d.c. electrical conductivity increased with an increase in temperature for each Ni-doped WO3 films. The device ideality factor (n) and barrier height (phi(B)) values were found to be decreased with a rise in Ni doping concentration. The better performance of the fabricated diode is observed p-Si/n-4 wt% of Ni@WO3 heterojunction diode with n = 1.820 and phi(B) = 0.759 eV values. The obtained results suggest that the p-Si/n-Ni@WO3 diode is more suitable for optoelectronic device applications.
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