Dominant formation of h-BC2N in h-BxCyNz films: CVD synthesis and characterization
DC Field | Value | Language |
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dc.contributor.author | Seo, Tae Hoon | - |
dc.contributor.author | Lee, WonKi | - |
dc.contributor.author | Lee, Kyu Seung | - |
dc.contributor.author | Hwang, Jun Yeon | - |
dc.contributor.author | Son, Dong Ick | - |
dc.contributor.author | Ahn, Seokhoon | - |
dc.contributor.author | Cho, Hyunjin | - |
dc.contributor.author | Kim, Myung Jong | - |
dc.date.accessioned | 2021-08-24T08:40:25Z | - |
dc.date.available | 2021-08-24T08:40:25Z | - |
dc.date.created | 2021-07-11 | - |
dc.date.issued | 2021-09 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81918 | - |
dc.description.abstract | Arranging carbon, boron, and nitrogen atoms in a sp2 network can give rise to tunable electronic properties from insulators (h-BN) to metals (graphene). For semiconductor applications, the construction of a ternary structure (h-BxCyNz) is highly desirable, but its uniform and large-area synthesis has remained a great challenge. This challenge has been attempted by a facile chemical vapor deposition method with a single molecular precursor, N-tri-methyl borazine where boron, carbon, and nitrogen atoms are covalently bonded, onto Ni catalysts in conjunction with the quenching method after the synthesis. The atomic structure closely resembles h-BC2N as revealed by XPS (B:C:N ∼ 1:1.8:1) and nanometer resolution EELS mapping, and the photoluminescence and electroluminescence observed from the h-BC2N film were in agreement, proving its well-established bandgap of 2.15 eV. As a practical application, the utilization of h-BC2N film for 2D light emitting diodes was demonstrated. Though films might have impurities such as small h-BN fragments and h-BxCyNz other than h-BC2N phase, we believe that this work provide a starting point of controlling the ternary BCN compounds that retain sp2 hybridized chemical bonds. © 2021 Elsevier Ltd | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | CARBON | - |
dc.title | Dominant formation of h-BC2N in h-BxCyNz films: CVD synthesis and characterization | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000684563200012 | - |
dc.identifier.doi | 10.1016/j.carbon.2021.06.080 | - |
dc.identifier.bibliographicCitation | CARBON, v.182, pp.791 - 798 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85109089138 | - |
dc.citation.endPage | 798 | - |
dc.citation.startPage | 791 | - |
dc.citation.title | CARBON | - |
dc.citation.volume | 182 | - |
dc.contributor.affiliatedAuthor | Kim, Myung Jong | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Bandgap | - |
dc.subject.keywordAuthor | Chemical vapor deposition | - |
dc.subject.keywordAuthor | h-BC2N | - |
dc.subject.keywordAuthor | Optoelectronic application | - |
dc.subject.keywordPlus | Atoms | - |
dc.subject.keywordPlus | Bond strength (chemical) | - |
dc.subject.keywordPlus | Boron | - |
dc.subject.keywordPlus | Boron nitride | - |
dc.subject.keywordPlus | Carbon | - |
dc.subject.keywordPlus | Chemical vapor deposition | - |
dc.subject.keywordPlus | Electronic properties | - |
dc.subject.keywordPlus | Nitrogen | - |
dc.subject.keywordPlus | Boron atom | - |
dc.subject.keywordPlus | Carbon atoms | - |
dc.subject.keywordPlus | Chemical vapour deposition | - |
dc.subject.keywordPlus | CVD synthesis | - |
dc.subject.keywordPlus | H-BC2N | - |
dc.subject.keywordPlus | Nitrogen atom | - |
dc.subject.keywordPlus | Optoelectronic applications | - |
dc.subject.keywordPlus | Semiconductor applications | - |
dc.subject.keywordPlus | Synthesis and characterizations | - |
dc.subject.keywordPlus | Tunable electronic properties | - |
dc.subject.keywordPlus | Energy gap | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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