Synthesis and Characterization of Hf-0.5 Zr0.5O2 (HZO) Ceramic Target via Modified Solid-State Reaction Method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Shin Kyu | - |
dc.contributor.author | Kim, Sangmo | - |
dc.contributor.author | Bark, Chung Wung | - |
dc.date.accessioned | 2021-09-09T00:40:49Z | - |
dc.date.available | 2021-09-09T00:40:49Z | - |
dc.date.created | 2021-09-09 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82095 | - |
dc.description.abstract | Ferroelectric random-access memory (FeRAM) is non-volatile, facilitates data storage via ferroelectricity, and it has attracted research attention as potential data storage means in high-performance computing applications. However, retention and fatigue problems have hampered its commercialization. Recently, the atomically controllable HfO2 FeRAM with high-density-storage capability has been developed. Although HfO2 is compatible with silicon-based fabrication technologies, its experimental realization is yet to be investigated. Thus, in this study, we have synthesized ZrO2 -doped HfO2 (also referred to as HfO5 Zr0.5O2 or HZO) with enhanced operating characteristics via a solid-state reaction and optimized ball-milling process. The HZO ceramic targets are sintered at different temperatures between 1000 degrees C and 1600 degrees C, and the influence of the sintering temperature on the HZO target properties is investigated. As observed, the HZO target sintered at 1600 degrees C optimum for film growth. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.title | Synthesis and Characterization of Hf-0.5 Zr0.5O2 (HZO) Ceramic Target via Modified Solid-State Reaction Method | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000691552200002 | - |
dc.identifier.doi | 10.1166/jno.2021.3010 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.16, no.5, pp.833 - 837 | - |
dc.description.isOpenAccess | N | - |
dc.citation.endPage | 837 | - |
dc.citation.startPage | 833 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 16 | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Lee, Shin Kyu | - |
dc.contributor.affiliatedAuthor | Bark, Chung Wung | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Hfo(2) | - |
dc.subject.keywordAuthor | FeRAM | - |
dc.subject.keywordAuthor | Target | - |
dc.subject.keywordAuthor | Ball Milling | - |
dc.subject.keywordAuthor | Solid-State Reaction | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MEMORY | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.