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Electrical properties and stability of low temperature annealed (Zn,Cu) co-doped (Ni,Mn)(3)O-4 spinel thin films

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dc.contributor.authorDuc Thang Le-
dc.contributor.authorCho, Jeong Ho-
dc.contributor.authorJu, Heongkyu-
dc.date.accessioned2021-10-10T02:40:47Z-
dc.date.available2021-10-10T02:40:47Z-
dc.date.created2021-05-17-
dc.date.issued2021-07-
dc.identifier.issn2187-0764-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82355-
dc.description.abstractToward the development of infrared (IR) detectors, nickel–manganite-based thin films were initially prepared from (Ni0.2Mn2.8–xCu x)Cl2 (0.010 ≤ x ≤ 0.040) solutions using the liquid flow deposition (LFD) method. The influence of Cu on the negative temperature coefficient of resistance (NTCR) characteristic of the films annealed at 400°C was investigated. It was found that the incorporation of Cu can effectively enhance electrical conductivity; however, it degrades both the thermal sensitivity and stability of the nickel–manganite films. The investigation was extended by further modifying the composition with Zn. The results revealed that by co-doping Cu with a proper amount of Zn the temperature coefficient of resistance (TCR) could be tailored, while a relatively low resistivity (ρ) of the final products was retained. Specially, when 0.01 mol Zn was added to a precursor solution containing 0.025 mol Cu, the resulting specimen possessed a TCR = 2.82% K–1 and a ρ = 820 Ω (measured at RT). More importantly, compared to Zn-free films, the (Zn,Cu) co-doped compositions showed much improved electrical stability, with an aging coefficient (ΔR/R) as low as 4.6%, after aging at 150°C in air for 500 h. The results suggest that the (Zn,Cu) co–doped (Ni,Mn)3O4 thin films have a promising application in IR detectors. © 2021 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of The Korean Ceramic Society and The Ceramic Society of Japan.-
dc.language영어-
dc.language.isoen-
dc.publisherTAYLOR & FRANCIS LTD-
dc.relation.isPartOfJOURNAL OF ASIAN CERAMIC SOCIETIES-
dc.titleElectrical properties and stability of low temperature annealed (Zn,Cu) co-doped (Ni,Mn)(3)O-4 spinel thin films-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000646913200001-
dc.identifier.doi10.1080/21870764.2021.1920157-
dc.identifier.bibliographicCitationJOURNAL OF ASIAN CERAMIC SOCIETIES, v.9, no.3, pp.838 - 850-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85105191257-
dc.citation.endPage850-
dc.citation.startPage838-
dc.citation.titleJOURNAL OF ASIAN CERAMIC SOCIETIES-
dc.citation.volume9-
dc.citation.number3-
dc.contributor.affiliatedAuthorDuc Thang Le-
dc.contributor.affiliatedAuthorJu, Heongkyu-
dc.type.docTypeArticle in Press-
dc.subject.keywordAuthorAging-
dc.subject.keywordAuthorcubic spinel-
dc.subject.keywordAuthorhopping mechanism-
dc.subject.keywordAuthornegative temperature coefficient-
dc.subject.keywordAuthornickel manganite-
dc.subject.keywordAuthorzinc-
dc.subject.keywordPlusDeposition-
dc.subject.keywordPlusManganites-
dc.subject.keywordPlusNickel-
dc.subject.keywordPlusSemiconductor doping-
dc.subject.keywordPlusTemperature-
dc.subject.keywordPlusElectrical conductivity-
dc.subject.keywordPlusElectrical stability-
dc.subject.keywordPlusLow resistivity-
dc.subject.keywordPlusLow temperatures-
dc.subject.keywordPlusNegative temperature coefficient of resistances-
dc.subject.keywordPlusPrecursor solutions-
dc.subject.keywordPlusTemperature coefficient of resistance-
dc.subject.keywordPlusThermal sensitivity-
dc.subject.keywordPlusThin films-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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