Structural properties of LaAlO3/SrTiO3 interfaces deposited by using off-axis RF sputtering

Abstract

To demonstrate the capability of growing conductive interfaces through large-scale deposition, we deposited amorphous LaAlO3(LAO)/SrTiO3(STO) by using off-axis RF-sputtering. The LAO/STO thin film deposited within the 2.0-inch range exhibited conducting properties. To confirm the structural properties and ensure accurate characterization of the LAO/STO films prepared by using off-axis sputtering, we performed X-ray reflectivity (XRR) and scanning electron microscopy (SEM) measurements. This paper reports on the structural properties of LAO/STO interfaces and discusses the interfacial quality and layer-to-layer uniformity based on a fitting of the XRR data. In terms of structural properties, the LAO/STO film deposited within the 1.35-inch range had the best surface among all investigated samples.