Extremely large magnetoresistance in high-mobility SrNbO3/SrTiO3 heterostructures
- Authors
- Zhang, Jie; Ok, Jong Mok; Pai, Yun-Yi; Lapano, Jason; Skoropata, Elizabeth; Mazza, Alessandro R.; Li, Haoxiang; Huon, Amanda; Yoon, Sangmoon; Lawrie, Benjamin; Brahlek, Matthew; Ward, T. Zac; Eres, Gyula; Miao, H.; Lee, Ho Nyung
- Issue Date
- Oct-2021
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.104, no.16
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 104
- Number
- 16
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83600
- DOI
- 10.1103/PhysRevB.104.L161404
- ISSN
- 2469-9950
- Abstract
- An extremely large linear magnetoresistance (LMR) is a ubiquitous phenomenon emerging from topological Dirac and Weyl semimetals. However, the connection between an LMR and a nontrivial topology is under extensive debate. In this paper, by precisely controlling the thickness of SrNbO3 thin films grown on SrTiO3 substrates, we observe an LMR over a large carrier density range with a magnetoresistance as high as 150 000% at a carrier density n similar to 10(21) cm(-3), far away from the quantum-limit regime. The temperature-, magnetic-field-, and carrier-density-dependent LMR in SrNbO3/SrTiO3 heterostructures provides compelling evidence of a mobility-driven LMR in coherent electronic systems. Our results uncover the general principle of an LMR and shed light on proper categorization of transport properties in topological and correlated materials.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.