Latent Order in High-Angle Grain Boundary of GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Sangmoon | - |
dc.contributor.author | Yoo, Hyobin | - |
dc.contributor.author | Kang, Seoung-Hun | - |
dc.contributor.author | Kim, Miyoung | - |
dc.contributor.author | Kwon, Young-Kyun | - |
dc.date.accessioned | 2022-03-03T04:41:42Z | - |
dc.date.available | 2022-03-03T04:41:42Z | - |
dc.date.created | 2022-03-03 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83619 | - |
dc.description.abstract | We report the existence of latent order during core relaxation in the high-angle grain boundaries (GBs) of GaN films using atomic-resolution scanning transmission electron microscopy and ab initio density functional theory calculations. Core structures in the high-angle GBs are characterized by two pairs of Ga-N bonds located next to each other. The core type correlates strongly with the bond angle differences. We identify an order of core relaxation hidden in the high-angle GBs by further classifying the 5/7 atom cores into a stable 5/7 core (5/7(S)) and a metastable 5/7 core (5/7(M)). This core-type classification indicates that metastable cores can exist at real high-angle GBs under certain circumstances. Interestingly, 5/7(M) exhibits distinct defect states compared to 5/7(S), despite their similar atomic configurations. We investigate the reconstruction of defect states observed in 5/7(M) by analyzing the real-space wave functions. An inversion occurred between two localized states during the transition from 5/7(S) to 5/7(M). We suggest an inversion mechanism to explain the formation of new defect states in 5/7(M). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.title | Latent Order in High-Angle Grain Boundary of GaN | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000427466500001 | - |
dc.identifier.doi | 10.1038/s41598-018-22603-3 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.8, no.1 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85044216597 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Yoon, Sangmoon | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | THREADING DISLOCATIONS | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | EDGE DISLOCATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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