Solution-Processed Black-Si/Cu2ZnSnS4 Nanocrystal Heterojunctions for Self-Powered Broadband Photodetectors and Photovoltaic Devices
DC Field | Value | Language |
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dc.contributor.author | Singh, Sudarshan | - |
dc.contributor.author | Sarkar, Arijit | - |
dc.contributor.author | Goswami, Dipak K. | - |
dc.contributor.author | Ray, Samit K. | - |
dc.date.accessioned | 2022-06-24T09:40:23Z | - |
dc.date.available | 2022-06-24T09:40:23Z | - |
dc.date.created | 2022-06-24 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 2574-0962 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84790 | - |
dc.description.abstract | We report, for the first time, the fabrication of n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunctions to demonstrate their photodetection and photovoltaic characteristics. Inks with crystalline CZTS NCs can be directly spin coated on an ultralow reflective (<1.5% in the visible range) metal-assisted chemical-etched black Si to fabricate solution-processed B-Si/CZTS heterojunctions, with the process compatible for large area applications. Fabricated devices operate as self-powered visible to near infrared (vis-NIR) wideband photodetectors, with a high I-ph/I-dark ratio of similar to 10(5), a very fast switching speed (similar to mu s), and remarkably high figure-of-merits at zero bias. Furthermore, an optimal thickness of NC layers exhibits superior photovoltaic characteristics with an efficiency >5.0%, even without any surface passivation or encapsulation of the device. The combined studies show impactful potential of the B-Si/CZTS NC heterojunction for future high-speed light-sensing and energy-harvesting devices using solution-processed techniques compatible to large area applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED ENERGY MATERIALS | - |
dc.title | Solution-Processed Black-Si/Cu2ZnSnS4 Nanocrystal Heterojunctions for Self-Powered Broadband Photodetectors and Photovoltaic Devices | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000644737800116 | - |
dc.identifier.doi | 10.1021/acsaem.1c00448 | - |
dc.identifier.bibliographicCitation | ACS APPLIED ENERGY MATERIALS, v.4, no.4, pp.4090 - 4098 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85104928581 | - |
dc.citation.endPage | 4098 | - |
dc.citation.startPage | 4090 | - |
dc.citation.title | ACS APPLIED ENERGY MATERIALS | - |
dc.citation.volume | 4 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Sarkar, Arijit | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | black silicon (B-Si) | - |
dc.subject.keywordAuthor | CZTS nanocrystals | - |
dc.subject.keywordAuthor | radial heterojunction | - |
dc.subject.keywordAuthor | self-powered photodetector | - |
dc.subject.keywordAuthor | photovoltaic devices | - |
dc.subject.keywordPlus | SOLAR-CELL | - |
dc.subject.keywordPlus | BLACK-SILICON | - |
dc.subject.keywordPlus | SCHOTTKY JUNCTION | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | PHOTORESPONSE | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | GEL | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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