Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing
DC Field | Value | Language |
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dc.contributor.author | Mohanan, Kannan Udaya | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2022-07-14T05:40:05Z | - |
dc.date.available | 2022-07-14T05:40:05Z | - |
dc.date.created | 2022-07-14 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 1931-7573 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84945 | - |
dc.description.abstract | Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and components need to be renovated to make a way out of the conventional software-driven artificial intelligence. In this work, we investigate the hardware performances of PIM architecture that can be presumably constructed by resistive-switching random-access memory (ReRAM) synapse fabricated with a relatively larger thermal budget in the full Si processing compatibility. By introducing a medium-temperature oxidation in which the sputtered Ge atoms are oxidized at a relatively higher temperature compared with the ReRAM devices fabricated by physical vapor deposition at room temperature, higher device reliability has been acquired. Based on the empirically obtained device parameters, a PIM architecture has been conceived and a system-level evaluations have been performed in this work. Considerations include the cycle-to-cycle variation in the GeOx ReRAM synapse, analog-to-digital converter resolution, synaptic array size, and interconnect latency for the system-level evaluation with the Canadian Institute for Advance Research-10 dataset. A fully Si processing-compatible and robust ReRAM synapse and its applicability for PIM are demonstrated. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.relation.isPartOf | NANOSCALE RESEARCH LETTERS | - |
dc.title | Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000820994300001 | - |
dc.identifier.doi | 10.1186/s11671-022-03701-8 | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.17, no.1 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85133460680 | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Mohanan, Kannan Udaya | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Medium-temperature oxidation | - |
dc.subject.keywordAuthor | Germanium oxide | - |
dc.subject.keywordAuthor | Resistive-switching random-access memory (ReRAM) | - |
dc.subject.keywordAuthor | Low-power hardware neural network | - |
dc.subject.keywordAuthor | Processing-in-memory (PIM) | - |
dc.subject.keywordPlus | SYNAPTIC DEVICE | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | RERAM | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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