Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures
DC Field | Value | Language |
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dc.contributor.author | Kim, Kihyun | - |
dc.contributor.author | Kang, Yehwan | - |
dc.contributor.author | Yun, Seungbok | - |
dc.contributor.author | Yang, Changheon | - |
dc.contributor.author | Jung, Eunsik | - |
dc.contributor.author | Hong, Jeongsoo | - |
dc.contributor.author | Kim, Kyunghwan | - |
dc.date.accessioned | 2022-08-25T17:40:13Z | - |
dc.date.available | 2022-08-25T17:40:13Z | - |
dc.date.created | 2022-08-19 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.issn | 2079-6412 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85290 | - |
dc.description.abstract | In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 mu m in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 mu m, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme to obtain low on-resistance SiC power devices with thin structures after SiC grinding. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | COATINGS | - |
dc.title | Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000817583900001 | - |
dc.identifier.doi | 10.3390/coatings12060777 | - |
dc.identifier.bibliographicCitation | COATINGS, v.12, no.6 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85131877413 | - |
dc.citation.title | COATINGS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Kim, Kihyun | - |
dc.contributor.affiliatedAuthor | Hong, Jeongsoo | - |
dc.contributor.affiliatedAuthor | Kim, Kyunghwan | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | silicon carbide | - |
dc.subject.keywordAuthor | Junction Barrier Schottky | - |
dc.subject.keywordAuthor | diode | - |
dc.subject.keywordAuthor | wafer thinning | - |
dc.subject.keywordAuthor | laser annealing | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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