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Revealing Three-in-One Nature of Organic Negative Transconductance Transistors

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dc.contributor.authorShin, Hye-Su-
dc.contributor.authorYoo, Hocheon-
dc.contributor.authorKim, Chang-Hyun-
dc.date.accessioned2022-09-13T00:40:10Z-
dc.date.available2022-09-13T00:40:10Z-
dc.date.created2022-09-13-
dc.date.issued2022-09-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85450-
dc.description.abstractIntroducing a negative transconductance (NTC) regime into a switching curve of a field-effect transistor is a promising approach to overcome the fundamental limit of traditional digital logic circuits. However, the operation of NTC devices is only weakly conceptualized up to the present. This study proposes a drastically new way of regarding an NTC transistor as a functional equivalent of three interconnected normal field-effect transistors. The electrical model is directly inspired by the structural and materials characteristics of high-performance organic devices, and it is fully confirmed by measured experimental data. This finding, therefore, rationalizes that the NTC transistors have a unique potential to greatly reduce the transistor count in an integrated circuit, and offers a simple yet universal tool for systematic design and optimization of NTC transistor circuits through simulation-driven engineering.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.relation.isPartOfIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.titleRevealing Three-in-One Nature of Organic Negative Transconductance Transistors-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000836678300001-
dc.identifier.doi10.1109/TED.2022.3193973-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.9, pp.5149 - 5154-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85135745441-
dc.citation.endPage5154-
dc.citation.startPage5149-
dc.citation.titleIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.volume69-
dc.citation.number9-
dc.contributor.affiliatedAuthorShin, Hye-Su-
dc.contributor.affiliatedAuthorYoo, Hocheon-
dc.contributor.affiliatedAuthorKim, Chang-Hyun-
dc.type.docTypeArticle-
dc.subject.keywordAuthorTransistors-
dc.subject.keywordAuthorIntegrated circuit modeling-
dc.subject.keywordAuthorInverters-
dc.subject.keywordAuthorVoltage measurement-
dc.subject.keywordAuthorLogic gates-
dc.subject.keywordAuthorBehavioral sciences-
dc.subject.keywordAuthorTransconductance-
dc.subject.keywordAuthorCircuit simulation-
dc.subject.keywordAuthordevice modeling-
dc.subject.keywordAuthorheterojunction-
dc.subject.keywordAuthornegative transconductance (NTC)-
dc.subject.keywordAuthororganic field-effect transistors-
dc.subject.keywordPlusTHRESHOLD VOLTAGE-
dc.subject.keywordPlusLOGIC-
dc.subject.keywordPlusMOBILITY-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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