Characteristics of La-doped BSO(LBSO) transparent conductive oxide as a hole transport layer
- Authors
- Kim, Su Hyeong; Jo, Jeong Hye; Park, Da Young; Moon, Dae Gyu; Yoon, Young Soo
- Issue Date
- Sep-2022
- Publisher
- SPRINGER HEIDELBERG
- Keywords
- Organic light emitting diode; Hole transport layer; BaSnO3; Band gap; Ag plating
- Citation
- JOURNAL OF THE KOREAN CERAMIC SOCIETY, v.59, no.5, pp.631 - 637
- Journal Title
- JOURNAL OF THE KOREAN CERAMIC SOCIETY
- Volume
- 59
- Number
- 5
- Start Page
- 631
- End Page
- 637
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85513
- DOI
- 10.1007/s43207-022-00226-9
- ISSN
- 1229-7801
- Abstract
- BaSnO3 (BSO) is a popular next-generation material with various applications such as solar cells and displays. However, it exhibits high electrical conductivity only in its single-crystal form. It is difficult to synthesize single crystals of a material with a perovskite structure; therefore, there has been extensive research on BSO, but this has been limited to solar cells. The improvement in electrical conductivity, carrier concentration, and mobility of spin-coated BSO through La-doping has been demonstrated by many researchers. Herein, the feasibility of spin-coated BSO as a hole transport layer (HTL) is demonstrated using doping and plating, specifically, Ag-plating is used to enhance the electrical conductivity of amorphous La-doped BSO. The proposed La-doping and Ag-plating method improved the electrical conductivity of amorphous BSO and mitigated the need of using vacuum equipment for single crystals. An OLED was fabricated using the Ag-plated LBSO as the HTL, and its EL and I-V-L characteristics were investigated. The findings of this study provide insights for further research on BSO-which is presently limited to solar cells-and demonstrate the possibility of using BSO in OLEDs. Through a 4-point probe, it was confirmed that 30 wt% of Ag-plated samples had a resistance of about 50 omega. In addition, the I-V-L results confirmed that LBSO had a Luminance of about 190,000 cd/m(2) and a current efficiency of about 23 cd/A, and that LBSO could be used as HTL.
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Collections - 공과대학 > 신소재공학과 > 1. Journal Articles
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