Characteristics of La-doped BSO(LBSO) transparent conductive oxide as a hole transport layer

Abstract

BaSnO3 (BSO) is a popular next-generation material with various applications such as solar cells and displays. However, it exhibits high electrical conductivity only in its single-crystal form. It is difficult to synthesize single crystals of a material with a perovskite structure; therefore, there has been extensive research on BSO, but this has been limited to solar cells. The improvement in electrical conductivity, carrier concentration, and mobility of spin-coated BSO through La-doping has been demonstrated by many researchers. Herein, the feasibility of spin-coated BSO as a hole transport layer (HTL) is demonstrated using doping and plating, specifically, Ag-plating is used to enhance the electrical conductivity of amorphous La-doped BSO. The proposed La-doping and Ag-plating method improved the electrical conductivity of amorphous BSO and mitigated the need of using vacuum equipment for single crystals. An OLED was fabricated using the Ag-plated LBSO as the HTL, and its EL and I-V-L characteristics were investigated. The findings of this study provide insights for further research on BSO-which is presently limited to solar cells-and demonstrate the possibility of using BSO in OLEDs. Through a 4-point probe, it was confirmed that 30 wt% of Ag-plated samples had a resistance of about 50 omega. In addition, the I-V-L results confirmed that LBSO had a Luminance of about 190,000 cd/m(2) and a current efficiency of about 23 cd/A, and that LBSO could be used as HTL.