Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/beta-Ga2O3 Heterojunction
DC Field | Value | Language |
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dc.contributor.author | Park, Taejun | - |
dc.contributor.author | Park, Sangbin | - |
dc.contributor.author | Park, Joon Hui | - |
dc.contributor.author | Min, Ji Young | - |
dc.contributor.author | Jung, Yusup | - |
dc.contributor.author | Kyoung, Sinsu | - |
dc.contributor.author | Kang, Tai Young | - |
dc.contributor.author | Kim, Kyunghwan | - |
dc.contributor.author | Rim, You Seung | - |
dc.contributor.author | Hong, Jeongsoo | - |
dc.date.accessioned | 2022-10-14T02:40:44Z | - |
dc.date.available | 2022-10-14T02:40:44Z | - |
dc.date.created | 2022-09-22 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85673 | - |
dc.description.abstract | In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type beta-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 degrees C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 degrees C, the as-fabricated device had a low leakage current of 4.24 x 10(-11) A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 mu W/cm(2) light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 x 10(11) Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/beta-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | NANOMATERIALS | - |
dc.title | Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/beta-Ga2O3 Heterojunction | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000851660500001 | - |
dc.identifier.doi | 10.3390/nano12172983 | - |
dc.identifier.bibliographicCitation | NANOMATERIALS, v.12, no.17 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85137756647 | - |
dc.citation.title | NANOMATERIALS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 17 | - |
dc.contributor.affiliatedAuthor | Park, Taejun | - |
dc.contributor.affiliatedAuthor | Park, Sangbin | - |
dc.contributor.affiliatedAuthor | Kim, Kyunghwan | - |
dc.contributor.affiliatedAuthor | Hong, Jeongsoo | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Ag2O/beta-Ga2O3 | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | deep ultraviolet | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | post-annealing | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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