Mechanically robust stretchable semiconductor metallization for skin-inspired organic transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Min Hyouk | - |
dc.contributor.author | Jeong, Min Woo | - |
dc.contributor.author | Kim, Jun Su | - |
dc.contributor.author | Nam, Tae Uk | - |
dc.contributor.author | Ngoc Thanh Phuong Vo | - |
dc.contributor.author | Jin, Lihua | - |
dc.contributor.author | Lee, Tae Il | - |
dc.contributor.author | Oh, Jin Young | - |
dc.date.accessioned | 2023-03-10T06:40:04Z | - |
dc.date.available | 2023-03-10T06:40:04Z | - |
dc.date.created | 2023-03-10 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87031 | - |
dc.description.abstract | Despite recent remarkable advances in stretchable organic thin-film field-effect transistors (OTFTs), the devel-opment of stretchable metallization remains a challenge. Here, we report a highly stretchable and robust met-allization on an elastomeric semiconductor film based on metal-elastic semiconductor intermixing. We found that vaporized silver (Ag) atom with higher diffusivity than other noble metals (Au and Cu) forms a continuous intermixing layer during thermal evaporation, enabling highly stretchable metallization. The Ag metallization maintains a high conductivity (>10(4) S/cm) even under 100% strain and successfully preserves its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive tape tests. More-over, a native silver oxide layer formed on the intermixed Ag clusters facilitates efficient hole injection into the elastomeric semiconductor, which transcends previously reported stretchable source and drain electrodes for OTFTs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER ASSOC ADVANCEMENT SCIENCE | - |
dc.relation.isPartOf | SCIENCE ADVANCES | - |
dc.title | Mechanically robust stretchable semiconductor metallization for skin-inspired organic transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000925156900015 | - |
dc.identifier.doi | 10.1126/sciadv.ade2988 | - |
dc.identifier.bibliographicCitation | SCIENCE ADVANCES, v.8, no.51 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85144581820 | - |
dc.citation.title | SCIENCE ADVANCES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 51 | - |
dc.contributor.affiliatedAuthor | Lee, Tae Il | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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