High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlOx Gate Insulator by Spray Pyrolysis
DC Field | Value | Language |
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dc.contributor.author | Chang, Yeoungjin | - |
dc.contributor.author | Bukke, Ravindra Naik | - |
dc.contributor.author | Kim, Youngoo | - |
dc.contributor.author | Ahn, Kiwan | - |
dc.contributor.author | Bae, Jinbaek | - |
dc.contributor.author | Jang, Jin | - |
dc.date.accessioned | 2023-03-14T07:40:31Z | - |
dc.date.available | 2023-03-14T07:40:31Z | - |
dc.date.created | 2023-03-10 | - |
dc.date.issued | 2023-02 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87109 | - |
dc.description.abstract | Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k ZAO gate insulator (GI) exhibits the field-effect mobility (mu(FE)) of 16 cm(2)V(-1)s(-1), threshold voltage (V-TH) of -0.45 V subthreshold swing (SS) of 133 mV/dec., and ON/OFF current ratio of similar to 10(8). The optimal a-IGTO TFT shows excellent stability under positive-bias-temperature stress (PBTS) with a small Delta V-TH shift of 0.35 V. The enhancements are due to the high film quality and fewer interfacial traps at the a-IGTO/ZAO interface. Therefore, the spray pyrolyzed a-IGTO TFT can be a promising candidate for flexible TFT in the next-generation display. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | ELECTRONICS | - |
dc.title | High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlOx Gate Insulator by Spray Pyrolysis | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000929296500001 | - |
dc.identifier.doi | 10.3390/electronics12030688 | - |
dc.identifier.bibliographicCitation | ELECTRONICS, v.12, no.3 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85147824088 | - |
dc.citation.title | ELECTRONICS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 3 | - |
dc.contributor.affiliatedAuthor | Chang, Yeoungjin | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | gallium | - |
dc.subject.keywordAuthor | amorphous IGTO | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | spray pyrolysis | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordPlus | FIELD EFFECT MOBILITY | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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