Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Song | - |
dc.contributor.author | Lee, Jeong-In | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.contributor.author | Kwon, Jin-Hyuk | - |
dc.contributor.author | Lee, Jonghee | - |
dc.contributor.author | Boampong, Amos Amoako | - |
dc.contributor.author | Kim, Min-Hoi | - |
dc.date.accessioned | 2023-06-30T14:40:23Z | - |
dc.date.available | 2023-06-30T14:40:23Z | - |
dc.date.created | 2023-06-22 | - |
dc.date.issued | 2023-12 | - |
dc.identifier.issn | 1468-6996 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88309 | - |
dc.description.abstract | The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300 degrees C in ambient, the carbon double bonds within the ZAA decreases. The RT-dried ZAA for the p-type organic-based CTM shows the widest threshold voltage shift (Delta V-TH approximate to 80 V), four distinct V-THs for a multi-bit memory operation and retained memory currents for 10(3) s with high memory on- and off-current ratio (I-M,I-ON/I-M,I-OFF approximate to 5X10(4)). The n-type oxide-based CTM (Ox-CTM) also shows a Delta V-TH of 14 V and retained memory currents for 10(3) s with I-M,I-ON/I-M,I-OFF approximate to 10(4). The inability of the Ox-CTM to be electrically erasable is well explained with simulated electrical potential contour maps. It is deduced that, irrespective of the varied solution-processed semiconductor used, the RT-dried organic ZAA as CTL shows the best memory functionality in the fabricated CTMs. This implies that the high carbon double bonds in the low-temperature processed ZAA CTL are very useful for low-cost multi-bit CTMs in flexible electronics. [GRAPHICS] . | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.relation.isPartOf | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | - |
dc.title | Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000991949600001 | - |
dc.identifier.doi | 10.1080/14686996.2023.2212112 | - |
dc.identifier.bibliographicCitation | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.24, no.1 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85159852562 | - |
dc.citation.title | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | - |
dc.citation.volume | 24 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Zirconium acetylacetonates | - |
dc.subject.keywordAuthor | solution-processes | - |
dc.subject.keywordAuthor | charge-trap layers | - |
dc.subject.keywordAuthor | thin-film memory transistors | - |
dc.subject.keywordAuthor | multi-bits | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ZRO2 | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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