High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide-Diketopyrrolopyrrole Polymer Interface
DC Field | Value | Language |
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dc.contributor.author | Lee, Hyuna | - |
dc.contributor.author | Kim, Yeo Eun | - |
dc.contributor.author | Bae, Jisuk | - |
dc.contributor.author | Jung, Sungyeop | - |
dc.contributor.author | Sporea, Radu A. | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.accessioned | 2023-07-21T04:41:08Z | - |
dc.date.available | 2023-07-21T04:41:08Z | - |
dc.date.created | 2023-05-08 | - |
dc.date.issued | 2023-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88550 | - |
dc.description.abstract | Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole-injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 G Omega, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.title | High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide-Diketopyrrolopyrrole Polymer Interface | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000935757200001 | - |
dc.identifier.doi | 10.1021/acsami.2c22350 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.15, no.8, pp.10918 - 10925 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85148677152 | - |
dc.citation.endPage | 10925 | - |
dc.citation.startPage | 10918 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 15 | - |
dc.citation.number | 8 | - |
dc.contributor.affiliatedAuthor | Lee, Hyuna | - |
dc.contributor.affiliatedAuthor | Kim, Yeo Eun | - |
dc.contributor.affiliatedAuthor | Bae, Jisuk | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | organic semiconductors | - |
dc.subject.keywordAuthor | source-gated transistors (SGTs) | - |
dc.subject.keywordAuthor | indium-tin oxide (ITO) | - |
dc.subject.keywordAuthor | diketopyrrolopyrrole (DPP) | - |
dc.subject.keywordAuthor | charge injection | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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