A 0.3 lx-1.4 Mlx Monolithic Silicon Nanowire Light-to-Digital Converter With Temperature-Independent Offset Cancellation
DC Field | Value | Language |
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dc.contributor.author | Rhee, Cyuyeol | - |
dc.contributor.author | Park, Junyoung | - |
dc.contributor.author | Kim, Suhwan | - |
dc.date.accessioned | 2023-07-24T07:40:14Z | - |
dc.date.available | 2023-07-24T07:40:14Z | - |
dc.date.created | 2023-07-24 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88619 | - |
dc.description.abstract | This article presents a monolithic light-to-digital converter (LDC) based on silicon nanowires. The silicon nanowires are arranged in a configuration, which allows cancellation for the offset due to dark leakage current and facilitates system-level chopping of the signal chain, including the nanowires. The readout integrated circuit (ROIC) has an analog front end (AFE) with a resistive-feedback transimpedance amplifier (TIA) to provide a constant voltage that strongly biases the nanowires. A programmable-gain switched-capacitor incremental delta-sigma analog-to-digital converter doubles the output of the TIA and feeds a digital back end that provides a decimated output. Finally, system-level chopping reduces the residual offset and 1/f noise, and 50-/60-Hz rejection suppresses interference from mains lighting. Fabricated in a 0.18-mu m CMOS process, the LDC has an input-referred current noise density of 235 fA/root Hz, and a dynamic range of 106.7, from 0.3 lx to 1.4 Mlx. The offset from the nanowires and the AFE is reduced to less than 30 mu V and offset drift of 193 nV/degrees C in a temperature range of -40 degrees C-85 degrees C. The AFE of the LDC draws 59.5 mu A at 3.3 V, and the digital back end draws 8 mu A at 1.8 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.title | A 0.3 lx-1.4 Mlx Monolithic Silicon Nanowire Light-to-Digital Converter With Temperature-Independent Offset Cancellation | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000510725300014 | - |
dc.identifier.doi | 10.1109/JSSC.2019.2949257 | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.55, no.2, pp.378 - 391 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85079618227 | - |
dc.citation.endPage | 391 | - |
dc.citation.startPage | 378 | - |
dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.citation.volume | 55 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Rhee, Cyuyeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | 1/f noise | - |
dc.subject.keywordAuthor | 50-/60-Hz rejection | - |
dc.subject.keywordAuthor | dark leakage current | - |
dc.subject.keywordAuthor | light-to-digital converter (LDC) | - |
dc.subject.keywordAuthor | programmable-gain incremental delta-sigma analog-to-digital converter (ADC) | - |
dc.subject.keywordAuthor | silicon nanowires | - |
dc.subject.keywordAuthor | system-level chopping | - |
dc.subject.keywordPlus | HEART-RATE | - |
dc.subject.keywordPlus | AMPLIFIER | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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