A Process-Variation-Tolerant On-Chip CMOS Thermometer for Auto Temperature Compensated Self-Refresh of Low-Power Mobile DRAM
DC Field | Value | Language |
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dc.contributor.author | Shim, Daeyong | - |
dc.contributor.author | Jeong, Hyunsik | - |
dc.contributor.author | Lee, Hyunjoong | - |
dc.contributor.author | Rhee, Cyuyeol | - |
dc.contributor.author | Jeong, Deog-Kyoon | - |
dc.contributor.author | Kim, Suhwan | - |
dc.date.accessioned | 2023-07-24T07:40:34Z | - |
dc.date.available | 2023-07-24T07:40:34Z | - |
dc.date.created | 2023-07-24 | - |
dc.date.issued | 2013-10 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88626 | - |
dc.description.abstract | Smaller transistors mean that capacitors are charged less uniformly, which increases the self-refresh current in the DRAMs used in mobile devices. Adaptive self-refresh using an on-chip thermometer can solve this problem. We propose an on-chip CMOS thermometer specifically designed for controlling the refresh period of a DRAM. This thermometer includes a novel temperature sensor which has been implemented and integrated into an LPDDR2 chip. The LPDDR2 chip is fabricated in a 44-nm DRAM process. The sensor has a temperature sensitivity of -3.2 mV/degrees C, over a range of 0 degrees C to 110 degrees C. Its resolution is 1.94 degrees C and is only limited by the 6.2-mV step of the associated resistor ladder not by its own design. The linearity of the sensor permits one-point calibration, after which the errors in 61 sample circuits ranged between -1.42 degrees C and +2.66 degrees C. The sensor has an active area of 0.001725 mm and consumes less than 0.36 mu W on average with a supply of 1.1 V. At its lowest operating temperature, this thermometer reduces the IDD6 current of the LPDDR2 chip by almost half. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.title | A Process-Variation-Tolerant On-Chip CMOS Thermometer for Auto Temperature Compensated Self-Refresh of Low-Power Mobile DRAM | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000324929700025 | - |
dc.identifier.doi | 10.1109/JSSC.2013.2272338 | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.48, no.10, pp.2550 - 2557 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-84884701537 | - |
dc.citation.endPage | 2557 | - |
dc.citation.startPage | 2550 | - |
dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 10 | - |
dc.contributor.affiliatedAuthor | Rhee, Cyuyeol | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Low-power | - |
dc.subject.keywordAuthor | mobile DRAM | - |
dc.subject.keywordAuthor | self-refresh | - |
dc.subject.keywordAuthor | temperature sensor | - |
dc.subject.keywordAuthor | thermometer | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | SDRAM | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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