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The effect of Sb2O3 additive on the electrical properties of ZnO varistorSb2O3 첨가제가 ZnO 배리스터의 전기적 특성에 미치는 영향
- Other Titles
- Sb2O3 첨가제가 ZnO 배리스터의 전기적 특성에 미치는 영향
- Authors
- Kim, Yong-Hyuk
- Issue Date
- Oct-2016
- Publisher
- Korean Institute of Electrical Engineers
- Keywords
- Critical voltage; Grain boundary; Non ohmic region; Nonlinear coefficient; Ohmic region; ZnO varistor
- Citation
- Transactions of the Korean Institute of Electrical Engineers, v.65, no.10, pp.1697 - 1701
- Volume
- 65
- Number
- 10
- Start Page
- 1697
- End Page
- 1701
- ISSN
- 1975-8359
- Abstract
- The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of Sb2O3 concentration. Leakage conduction in the ohmic region increased with increasing Sb2O3 concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of Sb2O3 . It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with Sb2O3 additive was attributed to the lowered capacitance in the grain boundary layer. © The Korean Institute of Electrical Engineers.
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